IKW40N60H3FKSA1
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Description:
IGBT 600V 80A 1.95V TO247-3
Supplier:
INFINEON
Matchcode:
IKW40N60H3
Rutronik No.:
IGBT1196
Unit Pack:
30
MOQ:
240
package:
TO247-3
Packaging:
TUBE
Datasheet
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Samples
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- V(CE)
- 600 V
- I(C)
- 80 A
- Package
- TO247-3
- Bodydiode
- YES
- Automotive
- NO
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- HighSpeed
- Packaging
- TUBE
- Supplier Part
- SP000769928
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 99 weeks
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
- Low switching losses for high efficiency
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Target Applications
- Welding
- Solar
- UPS
- All hard switching applications
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