IGW50N60H3FKSA1

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Description: IGBT 600V 100A 1.85V TO247-3 Supplier: INFINEON Matchcode: IGW50N60H3 Rutronik No.: IGBT1199 Unit Pack: 30 MOQ: 240 package: TO247-3 Packaging: TUBE

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Parameter

V(CE): 600 V
I(C): 100 A
V(CEsat): 2 V
Package: TO247-3
Bodydiode: NO
P(tot): 333 W
Automotive: NO
t(r): 24 nS
td(off): 235 nS
td(on): 23 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: TrenchStop
Packaging: TUBE

Supplier Part: SP000702548
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: China
ABC-Code: A
Supplier Lead time: 21 weeks

Description

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom