BSM180D12P3C007
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Description:
SiC Power Module 180A 1200V
Supplier:
ROHM
Matchcode:
BSM180D12P3C007
Rutronik No.:
TMOSP12817
Unit Pack:
12
MOQ:
12
package:
SICSTD02
Packaging:
BOX
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- Configuration
- SiCPWModul
- V(DSS)
- 1200 V
- I(D)at Tc=25°C
- 180 A
- Q(g)
- 880 nC
- P(tot)
- 0,17 W
- Technology
- SiC
- Topology
- YES
- Automotive
- NO
- Package
- SICSTD02
- RoHS Status
- RoHS-conform
- Packaging
- BOX
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Japan
- ABC-Code
- A
- Supplier Lead time
- 32 weeks
Silicon carbide Power Module - BSM180D12P3C007
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
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