WCDSC006XUMA1
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Datasheet
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Samples
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- Channels
- 2
- I(lim,min)/Ch
- 2 A
- Mounting
- SMD
- Diagnostics
- NO
- T(j,min)
- -55 °C
- T(j,max)
- 150 °C
- I(lim,max)/Ch
- 4 A
- V(in,min)
- 4.5 V
- V(in,max)
- 5.5 V
- t(on)
- 0.04 µS
- t(off)
- 0.04 µS
- OL Detection
- NO
- Automotive
- NO
- Package
- WSON-10
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP002574622
- ECCN
- EAR99
- Customs Tariff No.
- 85423990000
- Country
- Thailand
- ABC-Code
- B
- Supplier Lead time
- 18 weeks
Half-bridge level-shift gate-driver IC ensuring robust and efficient wireless charging operation
The half-bridge gate driver EiceDRIVER™ WCDSC006 is particularly suitable to drive both high-side and low-side MOSFETs in a half-bridge inverter configuration especially in inductive wireless power charging technology for smartphones.
The inputs of the gate driver are TTL (transistor-transistor logic) compatible and can withstand input voltages up to 7V regardless of the VDD voltage. Even though the high-side and low-side power devices are driven independently, the EiceDRIVER™ WCDSC006 gate driver enforces a 5ns (typ) dead-time to prevent shoot-through. It has a current capability of 4.0A sink and 2.0A source and offers a maximum bootstrap voltage of 60V for high input voltage operation.
The EiceDRIVER™ WCDSC006 gate driver goes together perfectly with Infineon’s OptiMOS™ 5 power MOSFET family and ensures a safe wireless power transfer by achieving high robustness and efficiency.
Summary of Features
- -0.3V to 7V input bin capability
- 4A sink and 2A source current capability for high-side and lo-side drivers
- Independent high-side / low-side TTL logic inputs
- Integrated bootstrap diode
- Maximum bootstrap voltage of 60V
- 5ns (typ) dead-time to prevent shoot-through
Benefits
- Increased robustness
- Faster switching mode and higher efficiency results
- Increase flexibility
- No need of external components
- Higher margin and more robust operation
- No risk of cross conduction
Potential Applications
- Wireless charging
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