IPN95R2K0P7ATMA1

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Description: N-CH 950V 4A 2000mOhm SOT223 Supplier: INFINEON Matchcode: IPN95R2K0P7 Rutronik No.: TMOS2474 Unit Pack: 3000 MOQ: 3000 package: SOT-223 Packaging: REEL

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Parameter

Configuration: N-CH
V(DS): 950 V
I(D)at Tc=25°C: 4 A
RDS(on)at 10V: 2000 mOhm
Q(g): 10 nC
P(tot): 7 W
R(thJC): 18,29 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS
Fast bodydiode: YES
Automotive: NO
Package: SOT-223
RoHS Status: RoHS-conform
Packaging: REEL

Supplier Part: SP001821834
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: China
ABC-Code: B
Supplier Lead time: 19 weeks

Description

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.

Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Summary of Features

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability

Benefits

Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings, and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns

Target Applications