IPN80R3K3P7ATMA1

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Description: N-CH 800V 1,9A 2800mOhm SOT223 Supplier: INFINEON Matchcode: IPN80R3K3P7 Rutronik No.: TMOS2565 Unit Pack: 3000 MOQ: 3000 package: SOT-223 Packaging: REEL

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Parameter

Configuration: N-CH
V(DS): 800 V
I(D)at Tc=25°C: 1.9 A
RDS(on)at 10V: 2800 mOhm
Q(g): 6 nC
P(tot): 6.1 W
Mounting: SMD
Technology: CoolMOS P7
Fast bodydiode: NO
Automotive: NO
Package: SOT-223
RoHS Status: RoHS-conform
Packaging: REEL

Supplier Part: SP001664992
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: China
ABC-Code: B
Supplier Lead time: 19 weeks

Description

Description:

Summary of Features

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio

Benefits

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs