IKB30N65ES5ATMA1
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Description:
IGBT 650V 35A 1.35V TO263-3
Supplier:
INFINEON
Matchcode:
IKB30N65ES5
Rutronik No.:
IGBT2476
Unit Pack:
1000
MOQ:
1000
package:
TO263-3
Packaging:
REEL
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- V(CE)
- 650 V
- I(C)
- 62 A
- V(CEsat)
- 1.35 V
- Package
- TO263-3
- Bodydiode
- YES
- P(tot)
- 188 W
- Automotive
- NO
- t(r)
- 12 nS
- td(off)
- 124 nS
- td(on)
- 17 nS
- Mounting
- SMD
- RoHS Status
- RoHS-conform
- Technology
- TRENCHST.5
- Packaging
- REEL
- Supplier Part
- SP001502572
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- B
- Supplier Lead time
- 21 weeks
Description:
Summary of Features
- Very low VCEsat of 1.35 V at 25 °C, 20 % lower than TRENCHSTOP™ 5 H5
- ICn=four times nominal current (100 °C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature Tvj=175 °C
- Qualified according to JEDEC standards
Benefits
- VCE(peak) clamping circuits not required
- Suitable for use with single turn-on / turn-off gate resistor
- No need for gate clamping components
- Gate drivers with Miller clamping not required
- Reduction in the EMI filtering needed
- Excellent for paralleling
Target Applications
- solar
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