IGB30N60H3ATMA1

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Description: IGBT 600V 60A 2.4V TO263-3 Supplier: INFINEON Matchcode: IGB30N60H3 Rutronik No.: IGBT1238 Unit Pack: 1000 MOQ: 1000 package: TO263 Packaging: REEL

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Parameter

V(CE): 600 V
I(C): 60 A
V(CEsat): 2.40 V
Package: TO263
Bodydiode: NO
P(tot): 187 W
Automotive: NO
t(r): 22 nS
td(off): 207 nS
td(on): 18 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: 2-20kHz
Packaging: REEL

Supplier Part: SP000852240
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: Malaysia
ABC-Code: B
Supplier Lead time: 21 weeks

Description

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom