IDW40G120C5BFKSA1
image shown is a representation only
Description:
SiC-D 1200 40A 1,4V TO247-3
Supplier:
INFINEON
Matchcode:
IDW40G120C5B
Rutronik No.:
DSKYP5478
Unit Pack:
30
MOQ:
240
package:
TO247-3
Packaging:
TUBE
Find Alternatives
Datasheet
Add to Project
Samples
Datasheet
Add to Project
Samples
Download the free Library Loader to convert this file for your ECAD Tool
- V(RRM)
- 1200 V
- I(F)per diode
- 20 A
- I(FSM)
- 290 A
- V(F)
- 1.65 V
- Technology
- 5thinQ!SiC
- Automotive
- NO
- Package
- TO247-3
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- Configuration
- CommonCath
- Mounting
- THT
- Supplier Part
- SP001020714
- ECCN
- EAR99
- Customs Tariff No.
- 85411000000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 14 weeks
The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
- Best-in-class forward voltage (VF)
- No reverse recovery charge
- Mild positive temperature dependency of VF
- Best-in-class surge current capability
- Excellent thermal performance
Benefits
- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.
Rutronik24 e-commerce is for corporate customers and organisations only.
