FS1150R08A8P3LBCHPSA1
New Product
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Description:
IGBT 750V 1150A HybridPACK3
Supplier:
INFINEON
Matchcode:
FS1150R08A8P3LBC
Rutronik No.:
POWMOD1412
Unit Pack:
6
MOQ:
96
package:
AG-HDG2XT-
Packaging:
TRAY
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- V(CE)
- 750 V
- I(C)
- 1150 A
- td(on)
- 222 ns
- td(off)
- 929 ns
- P(tot)
- 1000 W
- t(r)
- 50 ns
- V(CEsat)
- 1.08 V
- Bodydiode
- YES
- Mounting
- PRESSFIT
- Automotive
- AECQ100-D
- Package
- AG-HDG2XT-
- RoHS Status
- RoHS-conform
- Packaging
- TRAY
- Supplier Part
- SP005724696
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Germany
- Supplier Lead time
- 54 weeks
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
Summary of Features
- VCES = 750 V
- ICN = 1150 A / ICRM = 2300 A
- Blocking voltage 750 V
- Low VCE,sat
- Low switching losses
- Low Qg and Crss
- Low inductive design
- 4.2 kV DC 1 second insulation
- High creepage and clearance distances
- Direct-cooled PinFin base plate
- PCB and cooler assembly guidelines
- PressFIT contact technology
Benefits
- Higher temperature cycling capability
- Integrated diode temperature sensors
- New plastic material
- Better temperature capability
- New frame design
- Lower system BOM
- Lower AC contact resistance
- Lower tab temperature
- PressFIT Contact Technology
- RoHS compliant
- Completely Pb free
- Superior reliability
Potential Applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
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