BGA7L1N6E6327XTSA1
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Description:
SiGe Low noise amplifier LTE
Supplier:
INFINEON
Matchcode:
BGA7L1N6 E6327
Rutronik No.:
THF5266
Unit Pack:
15000
MOQ:
15000
package:
TSNP-6-2
Packaging:
REEL
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- Automotive
- NO
- Package
- TSNP-6-2
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001109134
- ECCN
- EAR99
- Customs Tariff No.
- 85423390000
- Country
- Malaysia
- Supplier Lead time
- 100 weeks
Silicon Germanium Low Noise Amplifier for LTE
Summary of Features:
- Insertion power gain: 13.3 dB
- Low noise figure: 0.90 dB
- Low current consumption: 4.4 mA
- Operating frequencies: 728 - 960 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
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