BGA7L1N6 E6327
![INFINEON INFINEON](https://www.rutronik24.com/images/logos/infineon_medium.png)
![INFINEON SP001109134](https://www.rutronik24.com/pim/direct/infineon/medium/infineon-bga7l1n6e6327.jpg)
image shown is a representation only
Description:
SiGe Low noise amplifier LTE
Supplier:
INFINEON
Matchcode:
BGA7L1N6 E6327
Rutronik No.:
THF5266
Unit Pack:
15000
MOQ:
15000
package:
TSNP-6-2
Packaging:
REEL
![](/assets/default/images/icons/pdf.png)
Download the free Library Loader to convert this file for your ECAD Tool
- Automotive
- NO
- Package
- TSNP-6-2
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001109134
- ECCN
- EAR99
- Customs Tariff No.
- 85423390000
- Country
- Malaysia
- Supplier Lead time
- 100 weeks
Silicon Germanium Low Noise Amplifier for LTE
Summary of Features:
- Insertion power gain: 13.3 dB
- Low noise figure: 0.90 dB
- Low current consumption: 4.4 mA
- Operating frequencies: 728 - 960 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.
Rutronik24 e-commerce is for corporate customers and organisations only.