BGA7L1BN6 E6327
![INFINEON INFINEON](https://www.rutronik24.com/images/logos/infineon_medium.png)
![INFINEON SP001402782](https://www.rutronik24.com/pim/direct/infineon/medium/infineon-bga7l1bn6e6327.jpg)
image shown is a representation only
Description:
SiGe Low noise amplifier LTE
Supplier:
INFINEON
Matchcode:
BGA7L1BN6 E6327
Rutronik No.:
THF5316
Unit Pack:
15000
MOQ:
15000
package:
TSNP-6-2
Packaging:
REEL
![](/assets/default/images/icons/pdf.png)
Download the free Library Loader to convert this file for your ECAD Tool
- Channels
- 5
- Automotive
- NO
- Package
- TSNP-6-2
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001402782
- ECCN
- EAR99
- Customs Tariff No.
- 85423390000
- Country
- Malaysia
- ABC-Code
- B
- Supplier Lead time
- 10 weeks
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc.
Summary of Features:
- Insertion power gain: 13.6 dB
- Low noise figure: 0.75 dB
- Low current consumption: 4.9 mA
- Insertion loss in bypass mode: -2.2 dB
- Operating frequencies: 716 - 960 MHz
- Two-state control: Bypass- and high gain-mode
- Supply voltage: 1.5 V to 3.6 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- Pb-free (RoHS compliant) package
LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.
Rutronik24 e-commerce is for corporate customers and organisations only.