BFR840L3RHESDE6327XTSA1
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Description:
NPN RF-Trans 1,80V 35mA TSLP-3
Supplier:
INFINEON
Matchcode:
BFR 840L3RHESD E6327
Rutronik No.:
THF5338
Unit Pack:
15000
MOQ:
15000
package:
TSLP-3
Packaging:
REEL
Datasheet
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Samples
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- Polarity
- NPN
- Frequency f
- 5000 MHz
- P(out)
- 0.075 W
- Package
- TSLP-3
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP000978848
- ECCN
- EAR99
- Customs Tariff No.
- 85412100000
- Country
- China
- Supplier Lead time
- 8 weeks
The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Summary of Features
- Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
- High transition frequency fT = 75 GHz to enable best in class noise performance at high frequencies: Nfmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 10 mA
- High gain Gms = 22 dB at 5.5 GHz, 1.8 V, 10 mA
- OIP3 = 18 dBm at 5.5 GHz, 1.8 V, 10 mA
- Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
- Low profile and small form factor leadless package
Potential Applications
- Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMAX and UWB
- Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo)
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