BFP840FESDH6327XTSA1
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Description:
NPN RF-Trans.1.8V 10mA TSFP-4
Supplier:
INFINEON
Matchcode:
BFP 840FESD H6327
Rutronik No.:
THF5336
Unit Pack:
3000
MOQ:
3000
package:
TSFP-4
Packaging:
REEL
Datasheet
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Samples
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- Polarity
- NPN
- Frequency f
- 5000 MHz
- P(out)
- 0.075 W
- Package
- TSFP-4
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP000977846
- ECCN
- EAR99
- Customs Tariff No.
- 85412100000
- Country
- China
- ABC-Code
- B
- Supplier Lead time
- 12 weeks
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Summary of Features:
- Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
- High transition frequency fT = 85 GHz to enable best in class noise figure at high frequencies: NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA
- High gain Gms = 23 dB at 5.5 GHz, 1.8 V, 10 mA
- OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
- Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
- Low profile and small form factor leadless package
- Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMAX and UWB
- Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo)
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