2ED2109S06FXUMA1
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Datasheet
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- Channels
- 2
- Mounting
- SMD
- Diagnostics
- YES
- T(j,max)
- 150 °C
- I(lim,max)/Ch
- 0.7 A
- V(in,min)
- 10 V
- V(in,max)
- 20 V
- t(on)
- 0.2 µS
- t(off)
- 0.2 µS
- OL Detection
- NO
- Automotive
- NO
- Package
- DSO-8
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001710062
- ECCN
- EAR99
- Customs Tariff No.
- 85423990000
- Country
- Malaysia
- ABC-Code
- B
- Supplier Lead time
- 18 weeks
650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package version is also available: 2ED21094S06J.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- IN, /SD logic input, shutdown input turns off both channels
- Internal 540 ns dead time
- 740 / 200 ns propagation delay
- Maximum supply voltage of 25 V
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- Integrated bootstrap diode(BSD)- Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages(-100 V) on VS pin
Applications
- Home appliances
- Motor control and drives
- Power Management (SMPS) - Reference Design
- Power tools
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