1EDI20N12AFXUMA1

EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for MOSFETs.1EDI20N12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20IN12AF offers separate sink and source output, 40 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Summary of Features

• EiceDRIVER™ Compact single channel isolated gate driver family
• For 600 V, 650 V, 950 V MOSFETs
• Galvanically isolated coreless transformer gate driver
• 4 A typical sinking and sourcing peak output current
• 40 V absolute maximum output supply voltage
• 120 ns propagation delay with 40 ns input filter
• High common-mode transient immunity CMTI >100 kV/μs
• Separate source and sink outputs
• Short-circuit clamping and active shutdown
• DSO-8 150 mil narrow-body package with 4 mm creepage distance
• 8 V/10 V undervoltage lockout (UVLO) protection with hysteresis

Benefits

• Tailored for all 650 V CoolMOS™ C7, P6 and other super junction MOS transistors
• High switching frequency applications as SMPS, up to 4 MHz
• Integrated filters reduce the need of external filters
• Suitable for operation at high ambient temperature and in fast switching applications
• No need to adapt signal voltage levels between μController and driver
• Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
• Short-circuit clamping to limit the gate voltage during short circuit