MB85RQ4MLPF-G-BCE1
image shown is a representation only
Download the free Library Loader to convert this file for your ECAD Tool
- Type
- SPI FRAM
- Density
- 4M bit
- Organisation
- 512Kx8
- Package
- SOP16
- Read/write cycl
- 1B
- Permis.T(A) min
- -40 °C
- Permis.T(A) max
- 85 °C
- U(cc)min
- 1.7 V
- U(cc)max
- 1.95 V
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Packaging
- TRAY
- ECCN
- EAR99
- Customs Tariff No.
- 85423290000
- Country
- Japan
- ABC-Code
- C
- Supplier Lead time
- 34 weeks
MB85RQ4ML is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.
MB85RQ4ML adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O).
The MB85RQ4ML is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cell used in the MB85RQ4ML can be used for 10 trillion read/write operations, which is a significant improvement over the number of read and write operations supported by Falsh memory and EEPROM.
MB85RQ4ML is able to write data at a high bandwidth without any waiting time and fits perfectly into Networking, Gaming, Industrial computing, Camera, RAID controllers etc.
With the articles in your cart you can send us an order, or - if you have further questions - a non-binding request.
Rutronik24 e-commerce is for corporate customers and organisations only.
